Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas
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چکیده
Please cite the original version: Perros, Alexander & Bosund, Markus & Sajavaara, Timo & Laitinen, Mikko & Sainiemi, Lauri & Huhtio, Teppo & Lipsanen, Harri. 2012. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF6 based plasmas. Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. Volume 30, Issue 1. P. 011504/1-5. ISSN 0734-2101 (printed). DOI: 10.1116/1.3664306.
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تاریخ انتشار 2015